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Principal Engineer, R&D Engineering

JR-0000048585 Requisition #


• In this position, the individual will be responsible to develop NAND memory trim, push the performance and reliability envelope of flash memory which is used in best-in-class high-density storage application

• The individual will be responsible for defining, developing, executing, and automating NAND flash memory reliability test; analyze & report data following predefined test flow.

• The individual will communicate & work with members from process, design, reliability, and system groups to ensure timely product device support, memory qualification, and ramp of volume production

• In this position the candidate will be part of a team that sits at the hub of activity between storage business units, technology development, and  manufacturing.


• This position requires an MS/PhD degree in Electrical Engineering, Applied Physics, or a related field, and 7+ years of relevant experience.

• This position requires in-depth knowledge of semiconductor device physics, process, and reliability, as well as circuit design. NAND flash memory device and physics knowledge is also a must

• C/C++/Java Programming and Perl/Python Scripts. 



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